Nanoscale silicon for electroluminescent devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3283, Issue , 1998, Pages 793-807

  Fauchet, Philippe M ^a   Tsybeskov, Leonid ^a  

^a University of Rochester   (United States)

Author keywords

Display; Electroluminescence; Light emitting diode; Nanocrystalline silicon superlattice; Nanocrystallite; Photoluminescence; Porous silicon; Silicon

Indexed keywords

CHEMICAL PROPERTIES; CURRENT DENSITY; DISPLAY DEVICES; ELECTROLUMINESCENCE; ELECTROOPTICAL DEVICES; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; LUMINESCENT DEVICES; MATERIALS; MATERIALS PROPERTIES; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; NANOCRYSTALLITES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; NONMETALS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

DISPLAY; DRIVER CIRCUITS; ELECTROLUMINESCENT DEVICES; LIGHT-EMITTING DIODE; NANOSCALE; ROOM TEMPERATURES; SI NANOCRYSTALLITES; SILICON MATERIALS; SILICON QUANTUM DOTS; SILICON SUPERLATTICES; STRONG LUMINESCENCES; TWO TYPES;

POROUS SILICON;

EID: 40849128594     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.316733     Document Type: Conference Paper

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