Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al-SiO2-Si and poly-Si-SiO2-Si structures

Thin Solid Films

Volumn 516, Issue 12, 2008, Pages 4184-4189

  Przewlocki, H M ^a   Kudla, A ^a   Piskorski, K ^a   Brzezinska, D ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Contact potential difference; Distribution; Flat band voltage; MOS structure

Indexed keywords

SILICON; VOLTAGE DISTRIBUTION MEASUREMENT;

BARRIER HEIGHTS; CONTACT POTENTIAL DIFFERENCE; FLAT-BAND VOLTAGE;

MOS DEVICES;

EID: 40849102873     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.11.005     Document Type: Article

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