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Volumn 29, Issue 1, 2008, Pages 19-22

Effects of annealing on the photoluminescence of 230 MeV Pb ion irradiation sapphire

Author keywords

Al2O3; Anneal; Heavy ion irradiation; PL spectra

Indexed keywords


EID: 40749114813     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (8)
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    • Song Yin, Zhang Chonghong, Wang Zhiguang, et al. Modification of ion implanted or irradiated single crystal sapphire [J]. Nuclear Phys. Review, 2006, 23(2) :198-201 (in Chinese).
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    • Yin, S.1    Zhang, C.2    Wang, Z.3
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  • 7
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    • Photoluminescence of inert-gas ion implanted sapphire after 230 MeV Pb ion irradiation [J]
    • Song Yin, Zhang Chonghong, Wang Zhiguang, et al. Photoluminescence of inert-gas ion implanted sapphire after 230 MeV Pb ion irradiation [J]. Nuclear Instruments and Methods in Physics Research B, 2006, 245(1) :210-213.
    • (2006) Nuclear Instruments and Methods in Physics Research B , vol.245 , Issue.1 , pp. 210-213
    • Yin, S.1    Zhang, C.2    Wang, Z.3
  • 8
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    • Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-temperature annealing [J]
    • in Chinese
    • Jiang Le, Yang Deren, Yu Xuegong, et al. Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-temperature annealing [J]. Acta Pysica Sinica, 2003, 52(8) :2000-2004 (in Chinese).
    • (2003) Acta Pysica Sinica , vol.52 , Issue.8 , pp. 2000-2004
    • Le, J.1    Yang, D.2    Yu, X.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.