Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer

Microelectronics Journal

Volumn 39, Issue 3-4, 2008, Pages 489-493

  Garcia Salgado G ^a   Hernandez R ^a   Martinez J ^a   Diaz T ^a   Juarez H ^a   Rosendo, E ^a   Galeazzi, R ^a   Garcia A ^a   Juarez G ^a  

^a CIDS   (Mexico)

Author keywords

Photodetector; Porous silicon; Responsivity

Indexed keywords

ANODIC OXIDATION; CHARACTERIZATION; COMPUTATIONAL GEOMETRY; MICROFABRICATION; PHOTOLITHOGRAPHY; POROUS SILICON; THICKNESS MEASUREMENT;

GEOMETRICAL PATTERNS; METAL LAYERS; POROUS ZONES; RESPONSIVITIES;

PHOTODETECTORS;

EID: 40649109579     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.112     Document Type: Article

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