Crystallization of amorphous Ge films induced by semiconductor diode laser annealing

Thin Solid Films

Volumn 516, Issue 11, 2008, Pages 3595-3600

  Sakaike, K ^a   Higashi, S ^a   Murakami, H ^a   Miyazaki, S ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Amorphous Ge; Crystallization; Polycrystalline Ge; Semiconductor diode laser

Indexed keywords

ANNEALING; CRYSTALLIZATION; GERMANIUM; METALLIC FILMS; SEMICONDUCTOR LASERS;

AMORPHOUS GE; POLYCRYSTALLINE GE; SEMICONDUCTOR DIODE LASERS;

AMORPHOUS MATERIALS;

EID: 40649096842     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.08.028     Document Type: Article

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