CON-TACT planarization process of spin-on dielectrics for device fabrication

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

  Shih, Wu Sheng ^a,c   Yota, Jiro ^b,c   Itchhaporia, Ketan ^a  

^a BREWER SCIENCE INC   (United States)

^b SKYWORKS SOLUTIONS INC   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SURFACE PROPERTIES; SURFACE TOPOGRAPHY;

CON-TACT PLANARIZATION TECHNOLOGY; PLANARIZATION; POLYBENZOXAZOLE;

DIELECTRIC MATERIALS;

EID: 40549120366     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2834244     Document Type: Article

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