Fundamentals, material properties and device performances in GaN MBE using on-surface cracking of ammonia

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Kamp, Markus ^a   Mayer, M ^a   Pelzmann, A ^a   Ebeling, K J ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; BINDING ENERGY; CRACK INITIATION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTOR MATERIALS; THERMODYNAMIC PROPERTIES;

DOPING PROFILES; NITROGEN PRECURSORS; ON-SURFACE CRACKING;

GALLIUM NITRIDE;

EID: 4043175550     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001526     Document Type: Article

References (19)

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Jpn. J. Appl. Phys. 34, L797-L799 (1995).
2. M. Koike, N. Sibata, S. Yamasaki, S. Nagai, S. Asami, H. Kato, N. Koide, H. Amano, I. Akasaki,Mater. Res. Soc. Symp. Proc. 395, 889 (1996).
3. H. Riechert, R. Averbeck, A. Graber, M. Schienle, U. Strauß, H. Thews, Mater. Res. Soc. Symp. Proc. 449, 149 (1997).
4. C.E.Mortimer, Chemie, G. Tieme Verlag Stuttgart (1987)
5. R.J.Meyer in Gmelins Handbuch der Anorganischen Chemie, Stickstoff, Verlag Chemie GmbH, Weinheim, (1936)
6. G. Ertl, M. Huber, J. Catal. 61, 537 (1980).
7. K. Tamaru, Trans. Faraday Soc. 57, 1410 (1960).
8. M.Grunze in D.A.King, "The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Synthesis and Decomposition of Ammonia», 4, Elsevier Scientific Publishing Company, Amsterdam (1982)
9. S. Nakamura, T. Mukai, M. Senoh, J. Appl. Phys. 71, 5543-5549 (1992).
10. K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, S. Minagawa, J. Appl. Phys. 79, 3487-3491 (1996).
11. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai, Jpn. J. Appl. Phys. 34, L1332-L1335 (1995).
12. H. S. Kong, M. Leonard, G. Bulman, G. Negley, J. Edmond, Mater. Res. Soc. Symp. Proc. 395, 903 (1996).
13. S Nakamura, M Senoh, S Nagahama, N Iwasa, T Yamada, T Matsushita, H Kiyoku, Y Sugimoto, Jpn. J. Appl. Phys. 35, L74-L76 (1996).
14. T Suski, P Perlin, M Leszczynski, H Teissere, I Grzegory, J Jun, M Bockowski, S Porowski, K Pakula, A Wysmolek, JM Baranowski, Mater. Res. Soc. Symp. Proc. 395, 15-26 (1996).
15. H. Teisseyre, G. Nowak, M. Leszczynski, I. Grzegory, M. Bockowski, S. Krukowski, S. Porowski, M. Mayer, A. Pelzmann, Markus Kamp, K. J. Ebeling, G. Karczewski, MRS Internet J. Nitride Semicond. Res. 1, 13 (1996).
16. M. Mayer, A. Pelzmann, M. Kamp, K. J. Ebeling, H. Teisseyre, G. Nowak, M. Leszczynski, I. Grzegory, M. Bockowski, S. Krukowski, S. Porowski, G. Karczewski, unpublished (1997).
17. Z. Yang, L. K. Li, W. I. Wang, Appl. Phys. Lett. 67, 1686-1688 (1995).
18. Jorg Neugebauer, Chris G. Van de Walle, Appl. Phys. Lett. 68, 1829-1831 (1996).
19. H.Y. Kressel, J.K. Buttler, Semiconductor Lasers and Heterojunction LEDs (Academic Press, Orlando, 1977).