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Volumn 210, Issue 10, 1995, Pages 731-740

Refinement of polycrystalline disordered cubic silicon carbide by structure modeling and X-ray diffraction simulation

Author keywords

Phase transformation; Stacking faults; Structure refinement

Indexed keywords


EID: 4043161726     PISSN: 14337266     EISSN: 00442968     Source Type: Journal    
DOI: 10.1524/zkri.1995.210.10.731     Document Type: Article
Times cited : (17)

References (29)
  • 1
    • 0000346921 scopus 로고
    • Polytype Distribution in Silicon Carbide
    • Frevel, L. K.; Petersen, D. R.; Saha, C. K.: Polytype Distribution in Silicon Carbide. J. Mater. Sci. 27 (1992) 1913–1925.
    • (1992) J. Mater. Sci , vol.27 , pp. 1913-1925
    • Frevel, L.K.1    Petersen, D.R.2    Saha, C.K.3
  • 2
    • 30244578498 scopus 로고
    • Relationship Between Lattice Parameters and Degree of Hexagonality in SiC Poly types
    • Gol'dshmidt, R.: Tairov, Yu. M.; Tsvetkov, V. F.; Chernov, M. A.: Relationship Between Lattice Parameters and Degree of Hexagonality in SiC Poly types. Sov. Phys. Crystallogr. 27 (1982) 371–372.
    • (1982) Sov. Phys. Crystallogr , vol.27 , pp. 371-372
    • Gol'dshmidt, R.1    Tairov, Y.M.2    Tsvetkov, V.F.3    Chernov, M.A.4
  • 5
    • 67849120836 scopus 로고
    • The Direct Identification of Stacking Sequences in Silicon Carbide Polytypes by High-Resolution Electron Microscopy
    • Jepps, N. W.; Smith, D. J.; Page, T. F.: The Direct Identification of Stacking Sequences in Silicon Carbide Polytypes by High-Resolution Electron Microscopy. Acta Crystallogr. A35 (1979) 916–923.
    • (1979) Acta Crystallogr. , vol.A35 , pp. 916-923
    • Jepps, N.W.1    Smith, D.J.2    Page, T.F.3
  • 6
    • 0017982495 scopus 로고
    • An Uncommon Mode of Morphological Development among Coherent Phases (SiC)
    • Kinsman, K. R.; Shinozaki, S.: An Uncommon Mode of Morphological Development among Coherent Phases (SiC). Scripta Metall. Mater. 12 (1978) 517–523.
    • (1978) Scripta Metall. Mater , vol.12 , pp. 517-523
    • Kinsman, K.R.1    Shinozaki, S.2
  • 7
    • 0024749130 scopus 로고
    • High-resolution Electron Microscopy Observations of Stacking Faults in β-SiC
    • Koumoto, K.; Takeda, S.; Pai, C. H.; Sato, T.; Yanagida, H.: High-resolution Electron Microscopy Observations of Stacking Faults in β-SiC. J. Am. Ceram. Soc. 72 (1989) 1985–1987.
    • (1989) J. Am. Ceram. , vol.72 , pp. 1985-1987
    • Koumoto, K.1    Takeda, S.2    Pai, C.3
  • 9
    • 0016472589 scopus 로고
    • Determination of the Ratios of Polytypes in a Silicon Carbide Grit Using Neutron Diffraction
    • Pain, L. F.; Miller, R. J. R.: Determination of the Ratios of Polytypes in a Silicon Carbide Grit Using Neutron Diffraction. J. Mater. Sci. 10 (1975) 189–192.
    • (1975) J. Mater. Sci , vol.10 , pp. 189-192
    • Pain, L.F.1    Miller, R.J.R.2
  • 10
    • 84990259356 scopus 로고
    • Evolution of Disordering in SiC upon Sintering; Phase Analysis of SiC by Rietveld Method with Application of Neutron and X-ray Diffraction
    • Palosz, B.; Boysen, H.; Schneider, J.; Schulz, H.: Evolution of Disordering in SiC upon Sintering; Phase Analysis of SiC by Rietveld Method with Application of Neutron and X-ray Diffraction. Acta Phys. Pol. A 83 (1993) 95–106.
    • (1993) Acta Phys. Pol. A , vol.83 , pp. 95-106
    • Palosz, B.1    Boysen, H.2    Schneider, J.3    Schulz, H.4
  • 11
    • 84942398255 scopus 로고
    • Structure of 13 New Poly types of Cadmium Iodide
    • Palosz, B.; Gierlotka, S.: Structure of 13 New Poly types of Cadmium Iodide. Z. Kristallogr. 166 (1984) 53–62.
    • (1984) Z. Kristallogr. , vol.166 , pp. 53-62
    • Palosz, B.1    Gierlotka, S.2
  • 12
    • 18544402631 scopus 로고
    • Simulation of Stacking Faults Effect on X-Ray Patterns of Silicon Carbide
    • Palosz, B.; Stel'makh, S.; Gierlotka, S.: Simulation of Stacking Faults Effect on X-Ray Patterns of Silicon Carbide. Mater. Sci. Forum 166–169 (1994) 603–608.
    • (1994) Mater. Sci. Forum 166–169 , pp. 603-608
    • Palosz, B.1    Stel'makh, S.2    Gierlotka, S.3
  • 13
    • 0024715417 scopus 로고
    • Synthesis of Sinterable β-powders by a Solid Combustion Method
    • Pampuch, R.; Stobierski, J.; Lis, J.: Synthesis of Sinterable β-powders by a Solid Combustion Method. J. Am. Ceram. Soc. 72 (1989) 1434–1435.
    • (1989) J. Am. Ceram. Soc. , vol.72 , pp. 1434-1435
    • Pampuch, R.1    Stobierski, J.2    Lis, J.3
  • 15
    • 0040642545 scopus 로고
    • Dislocations and Polytypic Transformations
    • Pirouz, P.; Hazzledine, P. M.: Dislocations and Polytypic Transformations. Solid State Phenomena 35–36 (1994) 183–216.
    • (1994) Solid State Phenomena , vol.35-36 , pp. 183-216
    • Pirouz, P.1    Hazzledine, P.M.2
  • 17
    • 0001597635 scopus 로고
    • The Quantitative Calculation of SiC Polytypes from Measurements of X-ray Diffraction Peak, Intensities
    • Ruska, J.; Glauckler, L. J.; Lorenz, J.; Rexer, H. U.: The Quantitative Calculation of SiC Polytypes from Measurements of X-ray Diffraction Peak, Intensities. J. Mater. Sci. 14 (1979) 2013–2017.
    • (1979) J. Mater. Sci. , vol.14 , pp. 2013-2017
    • Ruska, J.1    Glauckler, L.J.2    Lorenz, J.3    Rexer, H.U.4
  • 18
    • 49549137738 scopus 로고
    • One-dimensional Disordered Structure and Polytypism in SiC
    • Sato, H.; Shinozaki, S.: One-dimensional Disordered Structure and Polytypism in SiC. Mater. Res. Bull. 10 (1975) 257–260.
    • (1975) Mater. Res. Bull. , vol.10 , pp. 257-260
    • Sato, H.1    Shinozaki, S.2
  • 20
    • 0017970920 scopus 로고
    • Recrystallization and Phase Transformation in Reaction-Sintered SiC
    • Shinozaki, S. S.;Noakes, J. E.; Sato, H.: Recrystallization and Phase Transformation in Reaction-Sintered SiC. J. Am. Ceram. Soc. 61 (1978) 237–242.
    • (1978) J. Am. Ceram. Soc. , vol.61 , pp. 237-242
    • Shinozaki, S.S.1    Noakes, J.E.2    Sato, H.3
  • 21
    • 24844474973 scopus 로고
    • Lattice-Imaging Studies on Intergrowth Structures of Silicon Carbide
    • Singh, S. R.; Singh, G.: Lattice-Imaging Studies on Intergrowth Structures of Silicon Carbide. Acta Crystallogr. A36 (1980) 779–784.
    • (1980) Acta Crystallogr. , vol.A36 , pp. 779-784
    • Singh, S.R.1    Singh, G.2
  • 22
    • 0002576040 scopus 로고
    • Silicon Carbide Ceramics — 1: Fundamental and Solid Reaction
    • Somiya, S.; Inomata, Y. (Ed.): Silicon Carbide Ceramics — 1: Fundamental and Solid Reaction. Elsevier Applied Science 1991.
    • (1991) Elsevier Applied Science
    • Somiya, S.1    Inomata, Y.2
  • 24
    • 0026296715 scopus 로고
    • A General Recursion Method for Calculating Diffraction Intensities from Crystals Containing Planr Faults
    • Treacy, M. M. J.; Newman, J. M.; Deem, M. W.: A General Recursion Method for Calculating Diffraction Intensities from Crystals Containing Planr Faults. Proc. Roy. Soc. Lond. A 433 (1991) 499–520.
    • (1991) Proc. Roy. Soc. Lond. A , vol.433 , pp. 499-520
    • Treacy, M.M.J.1    Newman, J.M.2    Deem, M.W.3
  • 25
    • 0022145910 scopus 로고
    • Effects of Sintering Temperature on the Physical and Crystallographic Properties of β-SiC. Am. Ceram. Soc
    • Williams, R. M.; Juterbrock, B. N.; Shinozaki, S. S.; Peters, C. R.; Whalen, T. J.: Effects of Sintering Temperature on the Physical and Crystallographic Properties of β-SiC. Am. Ceram. Soc. Bull. 64 (1985) 1385–1389.
    • (1985) Bull , vol.64 , pp. 1385-1389
    • Williams, R.M.1    Juterbrock, B.N.2    Shinozaki, S.S.3    Peters, C.R.4    Whalen, T.J.5
  • 26
    • 0025799203 scopus 로고
    • Microanalytical Investigations of the Intermediate Sintering State of Silicon Carbide
    • Wroblewska, G. H.; Hamminger, R.: Microanalytical Investigations of the Intermediate Sintering State of Silicon Carbide. Ceram. Int. 17 (1991) 199–203.
    • (1991) Ceram. Int. , vol.17 , pp. 199-203
    • Wroblewska, G.H.1    Hamminger, R.2
  • 28
    • 0001122049 scopus 로고
    • Bimodal Distribution of Profile-Broadening Effects in Rietveld Refinement
    • Young, R. A.; Sakthivel, A.: Bimodal Distribution of Profile-Broadening Effects in Rietveld Refinement. J. Appl. Crystallogr. 21 (1988) 416–425.
    • (1988) J. Appl. Crystallogr. , vol.21 , pp. 416-425
    • Young, R.A.1    Sakthivel, A.2
  • 29
    • 0000058653 scopus 로고
    • Polytype-controlled Single-Crystal Growth of Silicon Carbide using 3C → 6H
    • Yoo, W. S.; Matsunami, H.: Polytype-controlled Single-Crystal Growth of Silicon Carbide using 3C → 6H. Solid-State Phase Transformation. 70 (1991) 7124–7131.
    • (1991) Solid-State Phase Transformation , vol.70 , pp. 7124-7131
    • Yoo, W.S.1    Matsunami, H.2


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