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Volumn 423, Issue 1, 2004, Pages 397-400

Stark broadening of the four times ionized silicon spectral lines

Author keywords

Atomic data; Atomic processes; Line: profiles

Indexed keywords

APPROXIMATION THEORY; IONIZATION; MATHEMATICAL MODELS; PARAMETER ESTIMATION; PERTURBATION TECHNIQUES; SILICON; SOLAR RADIATION; SPECTROSCOPIC ANALYSIS; UPPER ATMOSPHERE; X RAYS;

EID: 4043150147     PISSN: 00046361     EISSN: None     Source Type: Journal    
DOI: 10.1051/0004-6361:20047100     Document Type: Article
Times cited : (6)

References (38)
  • 29
    • 4043120182 scopus 로고
    • ed. G. Tallents (Bristol: Institute of Physics)
    • Griem, H. R., & Moreno, J. C. 1980, in X-ray lasers, ed. G. Tallents (Bristol: Institute of Physics), 301
    • (1980) X-ray Lasers , pp. 301
    • Griem, H.R.1    Moreno, J.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.