Physical limitation of the cascoded snapback NMOS ESD protection capability due to the non-uniform turn-off

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 2, 2004, Pages 281-291

  Vashchenko, Vladislav A ^a   Concannon, Ann ^a   Ter Beek, Marcel ^a   Hopper, Peter ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

Breakdown; Conductivity modulation; ESD protection; Snapback; Triggering

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; ELECTROSTATICS; EXTRAPOLATION; ISOTHERMS; LEAKAGE CURRENTS; OHMIC CONTACTS; THERMAL EFFECTS;

CONDUCTIVITY MODULATION; ELECTROSTATIC DISCHARGE PROTECTION; SNAPBACK; TRIGGERING;

CMOS INTEGRATED CIRCUITS;

EID: 4043091361     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.826378     Document Type: Article

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