Trapping during hopping conduction of electronic defects: A conductivity model for doped transition metal oxides

Physical Chemistry Chemical Physics

Volumn 6, Issue 13, 2004, Pages 3627-3632

  Martin, M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METAL OXIDE;

CONDUCTANCE; CONFERENCE PAPER; DIFFUSION; ELECTRON; ELECTRONICS; MOLECULAR MODEL;

EID: 4043067041     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/b402156h     Document Type: Conference Paper

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