Evidence of 2D-3D transition during the first stages of GaN growth on AlN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Widmann, F ^a   Daudin, B ^a   Feuillet, G ^a   Samson, Y ^a   Arlery, M ^a   Rouviere, J L ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; COALESCENCE; ELECTRON TRANSITIONS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES;

DEPOSITION CHAMBERS; ELASTIC RELAXATION; QUANTUM EFFECTS; STRAIN RELAXATION;

SEMICONDUCTOR GROWTH;

EID: 4043059297     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001460     Document Type: Article

References (9)

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