Magnetoelectric nano-Fe3O4/CoFe2O 4∥PbZr0.53Ti0.47O3 composite

Applied Physics Letters

Volumn 92, Issue 8, 2008, Pages

  Ren, Shenqiang ^a   Wuttig, Manfred ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; MAGNETIC FILMS; MAGNETIZATION; MAGNETOELECTRIC EFFECTS; PIEZOELECTRIC DEVICES; SOL-GEL PROCESS;

COERCIVE FIELDS; MAGNETOELECTRIC HYBRID DEVICE; VOLTAGE COEFFICIENT;

IRON OXIDES;

EID: 40049110923     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2841064     Document Type: Article

References (20)

1. J. Zhai, S. Dong, Z. Xing, J. F. Li, and D. Viehland, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2337996 89, 083507 (2006).
2. S. Dong, J. Zhai, J. Li, and D. Viehland, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2420772 89, 252904 (2006).
3. K. S. Chang, M. A. Aronova, C. L. Lin, M. Murakami, M. H. Yu, J. Hattrick-Simpers, O. O. Famodu, S. Y. Lee, R. Ramesh, M. Wuttig, I. Takeuchi, C. Gao, and L. A. Bendersky, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1699474 84, 3091 (2004).
4. H. Zheng, J. Wang, S. E. Lofland, Z. Ma, L. Mohaddes-Ardabili, T. Zhao, L. Salamanca-Riba, S. R. Shinde, S. B. Ogale, F. Bai, D. Viehland, Y. Jia, D. G. Schlom, M. Wuttig, A. Roytburd, and R. Ramesh, Science SCIEAS 0036-8075 10.1126/science.1094207 303, 661 (2004).
5. G. Srinivasan, E. T. Rasmussen, J. Gallegos, and R. Srinivasan, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.214408 64, 214408 (2001).
6. J. Ryu, A. V. Carazo, K. Uchino, and H. Kim, J. Electroceram. JOELFJ 1385-3449 10.1023/A:1012210609895 7, 17 (2001).
7. N. C. Pramanik, T. Fuji, M. Nanishi, and J. Takada, J. Mater. Sci. JMTSAS 0022-2461 40, 4169 (2005).
8. E. Arzt, Acta Mater. ACMAFD 1359-6454 10.1016/S1359-6454(98)00231-6 46, 5611 (1998).
9. C. Liu, A. J. Rondinone, and Z. John Zhang, Pure Appl. Chem. PACHAS 0033-4545 72, 37 (2000).
10. J. G. Wan, X. W. Wang, Y. J. Wu, M. Zeng, Y. Wang, H. Jiang, W. Q. Zhou, G. H. Wang, and J.-M. Liu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1889237 86, 122501 (2005).
11. J. Wen and G. L. Wilkes, Chem. Mater. CMATEX 0897-4756 10.1021/cm9601143 8, 1667 (1996).
12. H. He, J. Zhou, J. Wang, and C. W. Nan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2269705 89, 052904 (2006).
13. L. R. Bickford, J. Pappis, and J. L. Stull, Office of Naval Research Technical Report No. 1, 1954 (unpublished).
14. V. R. Palkar, K. G. Kumara, and S. K. Malik, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1695204 84, 2856 (2004).
15. T. Zhao, S. R. Shinde, S. B. Ogale, H. Zheng, T. Venkatesan, R. Ramesh, and S. D. Sarma, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.94.126601 94, 126601 (2005).
16. S. Ren and M. Wuttig, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2767174 91, 083501 (2007).
17. G. Srinivasan, E. T. Rasmussen, and R. Hayes, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.014418 67, 014418 (2003).
18. L. R. Bickford, J. Pappis, and J. L. Stull, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.99.1210 99, 1210 (1955).
19. R. M. Bozorth, E. F. Tilden, and A. J. Williams, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.99.1788 99, 1788 (1955).
20. A. H. Morrison and K. Handa, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.328979 52, 2496 (1981).