Thermally induced changes in optical and electrical properties of SnSb 2S4 thin films

EPJ Applied Physics

Volumn 41, Issue 2, 2008, Pages 91-95

  Gassoumi, A ^a   Kanzari, M ^a   Rezig, B ^a  

^a UNIVERSITY OF TUNIS EL MANAR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; OPTOELECTRONIC DEVICES; RAPID THERMAL ANNEALING; SUPERCONDUCTING TRANSITION TEMPERATURE; THERMAL EVAPORATION; THERMOELECTRICITY;

AMORPHOUS COMPONENTS; ANNEALING TEMPERATURE; SEMICONDUCTOR BEHAVIOR;

THIN FILMS;

EID: 40049104098     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2008011     Document Type: Article

References (12)

1. F.J. Morin, Phys. Rev. Lett. 34, 34 (1959)
2. G.N. Kryukovaa, M. Heuerb, G. Wagnerb, T. Doeringb, K. Bente, J. Solid State Chem. 178, 376 (2005)
3. H. Dittrich, D.J. Vaughan, R.A.D. Pattrick, S. Graeser, M. Lux-Steiner, R. Kunst, D. Lincot, 13th European Photovoltaic Solar Energy Conference, Nice, France, October 23-27, 1995, p. 1299
4. H. Dittrich, K. Herz, J. Eberhardt, G. Schlimm, Proc. 14th European PV Solar Energy Conf. H.S. Stephens & Ass., Barcelona, 1997, p. 2054
5. P. Smith, J. Parise, Acta Cristallogr. Sec. B, Structural Science 41, 84 (1985)
6. M. Kanzari, M. Abaab, B. Rezig, M. Brunel, Mater. Res. Bull. 32, 1009 (1997)
7. K.L. Chopra, Thin Film Phenomena (McGraw-Hill, New York, 1969), p. 721
8. S.F. Bartram, Handbook of X-Rays, edited by E.F. Kaelebe (McGraw-Hill, New York, 1967), Chap. 17
9. T.S. Moss, Optical Properties of Semiconductors (Butterworth, London, 1959)
10. E.A. Davis, N.F. Mott, Philipp. Mag. 22, 903 (1970)
11. G.A. Rozgonyi, D.H. Hensler, J. Vac. Sci. Technol. 5, 194 (1968)
12. G. Golan, A. Axelevitch, B. Sigalov, B. Gorenstein, J. Optoelectron. Adv. Mater 6, 189 (2004)