True process variation aware optical proximity correction with variational lithography modeling and model calibration

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 6, Issue 3, 2007, Pages

  Yu, Peng ^a,b   Shi, Sean X ^b   Pan, David Z ^a,b  

^a SPIE ^*

^b The University of Texas at Austin   (United States)

Author keywords

Defocus; Exposure dose; Integrated circuits; Optical proximity correction; Process variation; Resolution; Resolution enhancement technique; Variational edge placement error; Variational lithography modeling

Indexed keywords

ELECTRIC PROPERTIES; INTEGRATED CIRCUITS; OPTICAL RESOLVING POWER; WAVELENGTH;

OPTICAL PROXIMITY CORRECTION (OPC; VARIATIONAL EDGE PLACEMENT ERROR (VEPE);

LITHOGRAPHY;

EID: 40049104047     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.2752814     Document Type: Article

References (60)