Stress imagining of semiconductor surface by tip-enhanced Raman spectroscopy

Journal of Microscopy

Volumn 229, Issue 2, 2008, Pages 217-222

  Saito, Y ^a   Motohashi, M ^a   Hayazawa, N ^a,c   Kawata, S ^a,b,c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Apertureless probe; Metallized tip; Near field; SERS; Strained silicon; Surface enhanced Raman spectroscopy; TERS; Tip enhanced Raman spectroscopy

Indexed keywords

EXCITED STATES; METALLIZING; NANOTECHNOLOGY; SILICON NITRIDE; SILVER COMPOUNDS; STRAINED SILICON; STRESS ANALYSIS;

APERTURELESS PROBES; METALLIZED TIP; NANO SCALE; NEAR FIELDS; SEMI-CONDUCTOR SURFACES; SERS; STRAINED-SILICON; SURFACE ENHANCED RAMAN SPECTROSCOPY; TERS; TIP-ENHANCED RAMAN SPECTROSCOPY;

RAMAN SPECTROSCOPY;

QUANTUM DOT; SILICON NITRIDE;

CONFERENCE PAPER; DIFFRACTION; IMAGE ENHANCEMENT; PRIORITY JOURNAL; RAMAN SPECTROMETRY; SEMICONDUCTOR;

EID: 40049084761     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2008.01889.x     Document Type: Conference Paper

References (32)

1. Anderson, M.S. & Pike, W.T. (2002) A Raman-atomic force microscope for apertureless-near-field spectroscopy and optical trapping. Rev. Sci. Inst. 73, 1198 1203.
2. Bulgarevich, D.S. & Futamata, M. (2004) Apertureless tip-enhanced Raman microscopy with confocal epi-illumination/collection optics. Appl. Spectrosc. 58, 757 761.
3. Chang, R.K. & Furtak, T.E. (1981) Surface Enhanced Raman Scattering. Plenum Press & Yamamoto, K. (1996) Raman scattering from acoustic phonons confined in Si nanocrystals. Phys. Rev. B 54, 8373 8376.
4. Goodman, G.G., Pajcini, V., Smith, S.P. & Merrill, P.B. (2005) Characterization of strained Si structures using SIMS and visible Raman. Mat. Sci. Semicond. Process. 8, 225 260.
5. Hartschuh, A., Sánchez, E.J., Xie, X.S. & Novotny, L. (2003) High-resolution near-field Raman microscopy of single-walled carbon nanotubes. Phys. Rev. Lett. 90, 095503-1 095503-4.
6. Hayazawa, N., Inouye, Y., Sekkat, Z. & Kawata, S. (2000) Metallized tip amplification of near-field Raman scattering. Opt. Commun. 183, 333 336.
7. Hayazawa, N., Inouye, Y., Sekkat, Z. & Kawata, S. (2001) Near-field Raman scattering enhanced by a metallized tip. Chem. Phys. Lett. 335, 369 374.
8. Hayazawa, N., Inouye, Y., Sekkat, Z. & Kawata, S. (2002) Near-field Raman imaging of organic molecules by an apertureless metallic probe scanning optical microscope. J. Chem. Phys. 117, 1296 1301.
9. Hayazawa, N., Tarun, A., Inouye, Y. & Kawata, S. (2003) Near-field enhanced Raman spectroscopy using side illumination optics. J. Appl. Phys. 92, 6983 6986.
10. Hayazawa, N., Motohashi, M., Saito, Y. & Kawata, S. (2005) Highly sensitive strain detection in strained silicon by surface-enhanced Raman spectroscopy. Appl. Phys. Lett. 86, 263114-1 263114-3.
11. Holtz, M., Duncan, W.M., Zollner, S. & Liu, R. (2000) Visible and ultraviolet Raman scattering studies of Si1-xGex alloys. J. Appl. Phys. 88, 2523 2528.
12. Inouye, Y. & Kawata, S. (1994) Near-field scanning optical microscope with a metallic probe tip. Opt. Lett. 19, 159 161.
13. Jacobsen, R.S., Andersen, K.N., Borel, P.I., et al 2006) Strained silicon as a new electro-optic material. Nature 441, 199 202.
14. Lee, M.L., Fitzgerald, E.A., Bulsara, M.T., Currie, M.T. & Lochtefeld, A. (2005) Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 97, 011101-1 011101-28.
15. Lewis, A. (2006) A multiple probes NSOM/SPM system. 9th International Conference on Near-Field Optics 241.
16. Matsukawa, K. (2005) Silicon Devices and Crystallization Techniques (ed. by H. Shimizu) Realize Publishing, Japan.
17. McCarthy, J., Bhattacharya, S., Perova, T.S., Moore, R.A., Gamble, H. & Armstrong, B.M. (2004) Composition and stress analysis in si structures using micro-Raman spectroscopy. Scanning 26, 235 239.
18. Mehtani, D., Lee, N., Hartschuh, R.D., Kisliuk, A., Foster, M.D., Sokolov, A.P. & Maguire, J.F. (2005) Nano-Raman spectroscopy with side-illumination optics. J. Raman Spectrosc. 36, 1068 1075.
19. Mehtani, D., Lee, N., Hartschuh, R.D., Kisliuk, A.D., Foster, M., Sokolov, A.P., Caiko, F. & Tsukerman, I. (2006) Optical properties and enhancement factors of the tips for apertureless near-field optics. J. Opt. A 8, S183 S190.
20. Nakashima, S., Mitani, T., Ninomiya, M. & Matsumoto, K. (2006) Raman investigation of strain in Si/SiGe heterostructures: Precise determination of the strain-shift coefficient of Si bands. J. Appl. Phys. 99, 053512-1 053512-6.
21. Pettinger, B., Ren, B., Picardi, G., Schuster, R. & Ertl, G. (2004) Nanoscale probing of adsorbed species by tip-enhanced Raman spectroscopy. Phys. Rev. Lett. 92, 096101-1 096101-4.
22. Poborchii, V., Tada, T. & Kanayama, T. (2005) Subwavelength- resolution Raman microscopy of Si structures using metal-particle-topped AFM probe. Jap. J. Appl. Phys. 44, L202 L204.
23. Roy, D., Wang, J. & Welland, M.E. (2006) Nanoscale imaging of carbon nanotubes using tip enhanced Raman spectroscopy in reflection mode. Far. Disc. 132, 215 225.
24. Saito, Y., Motohashi, M., Hayazawa, N., Iyoki, M. & Kawata, S. 2006) Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode. Appl. Phys. Lett. 88, 143109-1 143109-3.
25. Schaffler, F. (1997) High-mobility Si and Ge structures. Semicon. Sci. Tech. 12, 1515 1549.
26. Stöckle, R.M., Suh, Y.D., Deckert, V. & Zenobi, R. (2000) Nanoscale chemical analysis by tip-enhanced Raman spectroscopy. Chem. Phys. Lett. 318, 131 136.
27. Tsang, J.C., Mooney, P.M., Dacol, F. & Chu, J.O. (1994) Measurements of alloy composition and strain in thin GexSi1-x layers. J. Appl. Phys. 75, 8098 8108.
28. Van Duyne, R.P. (1979) Chemical and Biological Application of Lasers (ed. by C.B. Moor). Academic Press, New York.
29. Verma, P., Yamada, K., Watanabe, H., Inouye, Y. & Kawata, S. (2006) Near-field Raman scattering investigation of tip effects on C-60 molecules. Phys. Rev. B 73, 045416-1 045416-6.
30. Webster, S., Batchelder, D.N. & Smith, D.A. (1998) Submicron resolution measurement of stress in silicon by near-field. Appl. Phys. Lett. 72, 1478 1480.
31. Whall, T.E. & Parker, E.H.C. (1998) SiGe heterostructures for FET applications. J. Phys. D 31, 1397 1416.
32. Yano, T., Inouye, Y. & Kawata, S. (2006) Nanoscale uniaxial pressure effect of a carbon nanotube bundle on tip-enhanced near-field Raman spectra. Nano Lett. 6, 1269 1273.