From molecules to nanoscale materials: The structural and electronic properties of small gallium arsenide clusters up to Ga9As9

Journal of Computational and Theoretical Nanoscience

Volumn 5, Issue 1, 2008, Pages 70-79

  Zhou, Xiaolan ^a   Zhao, Jijun ^a,b   Chen, Xiaoshuang ^a   Lu, Wei ^a   Xie, Ruihua ^c   Chen, Zhongfang ^d   King, R Bruce ^d  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^c KANSAS STATE UNIVERSITY   (United States)

^d UNIVERSITY OF GEORGIA   (United States)

Author keywords

Cluster; Electronic property; GaAs; Geometry

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; GRADIENT METHODS; MOLECULES; POTENTIAL ENERGY SURFACES; SEMICONDUCTING GALLIUM ARSENIDE;

CLUSTER; GENERALIZED GRADIENT APPROXIMATION; NANOSCALE MATERIAL; NORMAL MODE ANALYSIS;

NANOSTRUCTURES;

EID: 39849098919     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (61)