Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQ

Proceedings - International Test Conference

Volumn , Issue , 2007, Pages

  Kang, Kunhyuk ^a   Alam, Muhammad Ashraful ^a   Roy, Kaushik ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CIRCUITS; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE; TOPOLOGY;

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); REACTION DIFFUSION (RD); STATIC NOISE MARGIN (SNM);

VLSI CIRCUITS;

EID: 39749183560     PISSN: 10893539     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TEST.2007.4437590     Document Type: Conference Paper

References (36)