Hall effect signatures of electronic structure change near a field induced quantum critical point in U (Ru1 - x Rhx)2 Si2

Physica B: Condensed Matter

Volumn 403, Issue 5-9, 2008, Pages 721-725

  Kim, Kee Hoon ^a   Seok Oh, Yoon ^a   Sharma, P A ^b   Harrison, N ^c   Amitsuka, H ^c   Mydosh, J A ^d  

^a Seoul National University   (South Korea)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c HOKKAIDO UNIVERSITY   (Japan)

^d UNIVERSITY OF COLOGNE   (Germany)

Author keywords

Fermi surface reconstruction; Field induced quantum critical point; Hall coefficient; URu2 Si2

Indexed keywords

ELECTRIC CONDUCTIVITY MEASUREMENT; FERMI SURFACE; HALL EFFECT; LOW TEMPERATURE EFFECTS; MAGNETIZATION; QUANTUM THEORY; URANIUM COMPOUNDS;

FERMI SURFACE RECONSTRUCTION; FIELD-INDUCED QUANTUM CRITICAL POINTS; HALL COEFFICIENTS; QUANTUM CRITICAL POINTS;

ELECTRONIC STRUCTURE;

EID: 39749176287     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.10.022     Document Type: Article

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