Power trench MOSFETs with very low specific on-resistance for 25V applications

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 274-277

  Goarin, Pierre ^a   Van Dalen, Rob ^a   Koops, Gerhard ^a   Le Cam, Christelle ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON BEAM LITHOGRAPHY; TOPOLOGY;

IMPLANT TOPOLOGY; PITCH SIZE;

MOSFET DEVICES;

EID: 39749155651     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307691     Document Type: Conference Paper

References (11)

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3. M.A.A. in't Zandt et al. ISPSD 2003, p159
4. M. Darwish et al., ISPSD 2003
5. L. Ma et al., ISPSD 2003
6. S. Ono et al., ISPSD 2003
7. J.Kim et al., ISPSD 2003
8. S. T. Peake et al., ISPSD 2002
9. J. Zeng et al., ISPSD 2001
10. R Sohdi et al., ISPSD 1999
11. US patent 6,635,535 B2