Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities

Semiconductors

Volumn 42, Issue 2, 2008, Pages 159-172

  Mezdrogina, M M ^a   Krivolapchuk, V V ^a   Kozhanova, Yu V ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 39749154730     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/s1063782608020073     Document Type: Article

References (21)

1. J. H. Park and A. J. Steckl, Appl. Phys. Lett. 85, 4588 (2004).
2. J. H. Park and A. J. Steckl, J. Appl. Phys. 98, 056108 (2005).
3. J. U. Hite, G. T. Thaler, R. Khanna, et al., Appl. Phys. Lett. 89, 132119 (2006).
4. S. Kim, S. J. Rhese, X. Li, et al., Appl. Phys. Lett. 76, 2403 (2000).
5. V. V. Krivolapchuk, M. M. Mezdrogina, A. V. Nasonov, and S. N. Rodin, Fiz. Tverd. Tela (St. Petersburg) 45, 1556 (2003) [Phys. Solid State 45, 1634 (2003)].
6. V. V. Krivolapchuk, Yu. V. Kozhanova, M. M. Mezdrogina, and S. N. Rodin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 1033 (2006) [Semiconductors 40, 1007 (2006)].
7. M. M. Mezdrogina, V. V. Krivolapchuk, V. N. Petrov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 1412 (2006) [Semiconductors 40, 1378 (2006)].
8. C. L. Wu, J.-Y. Hen, and S. Gao, Appl. Phys. Lett. 85, 2071 (2004).
9. V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, and N. N. Zinov'ev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1428 (1999) [Semiconductors 33, 1284 (1999)].
10. H. J. Lozukowsky, Phys. Rev. B 48, 17758 (1993).
11. J. B. Gruber, B. Zandi, and H. J. Lozukowsky, J. Appl. Phys. 91, 2929 (2002).
12. M. I. Gaǐduk, V. F. Zolin, and L. S. Gaǐgerova, Luminescence Spectra of Europium (Nauka, Moscow, 1974) [in Russian].
13. P. P. Seregin, M. M. Mezdrogina, F. S. Nasredinov, and Zh. Abdumanapov, Phys. Status Solidi B 155, 107 (1989).
14. A. S. Segal, A. V. Kondratyev, S. Yu. Karpov, et al., J. Cryst. Growth 270, 800 (2004).
15. A. Asano, Appl. Phys. Lett. 56, 533 (1990).
16. V. V. Lundin, A. E. Nikolaev, E. E. Zavarin, et al., in Abstracts of 5th All-Russia Conference on Gallium, Indium, and Aluminum Nitride: Structures and Devices (Moscow, 2007), p. 14.
17. A. N. Semenov, V. N. Zhmerik, A. M. Mizerov, and S. V. Ivanov, in Abstracts of 4th All-Russian Conference on Gallium, Indium, and Aluminum Nitride: Structures and Devices (St. Petersburg, 2005), p. 56.
18. M. Reshnikov and H. Morkos, J. Appl. Phys. 97, 061301 (2005).
19. S. Coffa, G. Franzo, F. Priolo, et al., Phys. Rev. B 49, 1613 (1994).
20. V. V. Krivolapchuk, V. V. Lundin, M. M. Mezdrogina, et al., Fiz. Tverd. Tela (St. Petersburg) 46, 814 (2004) [Phys. Solid State 46, 836 (2004)].
21. J. P. Suchet, Chemical Physics of Semiconductors (Van Nostrand, London, 1965; Metallurgiya, Moscow, 1969).