Variation in optical-absorption edge in SiN x layers with silicon clusters

Semiconductors

Volumn 42, Issue 2, 2008, Pages 202-207

  Efremov, M D ^a   Volodin, V A ^a   Marin, D V ^a   Arzhannikova, S A ^a   Kamaev, G N ^a   Kochubei S A ^a   Popov, A A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 39749140957     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/s1063782608020152     Document Type: Article

References (9)

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5. D. A. G. Bruggeman, Ann. Phys. (Leipzig) 24, 636 (1935).
6. V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors: A Handbook (Naukova Dumka, Kiev, 1987) [in Russian].
7. F. Alvarez and A. A. Valladares, Phys. Rev. B 68, 205203 (2003).
8. L. D. Landau and E. M. Lifshitz, Course of Theoretical Physics, Vol. 8: Electrodynamics of Continuous Media, 2nd ed. (Nauka, Moscow, 1982; Pergamon, Oxford, 1984), Chap. 9, p. 67.
9. S. A. Arzhannikova, M. D. Efremov, V. A. Volodin, et al., Solid State Phenom. 108-109, 53 (2005).