Enhanced infrared response of Si base p-n diode with self-assembled Ge quantum dots by thermal annealing

Applied Surface Science

Volumn 254, Issue 11, 2008, Pages 3376-3379

  Cai, Qijia ^a   Zhou, Hao ^a   Lu, Fang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

PL spectra; Quantum dots; Raman spectra; Thermal annealing

Indexed keywords

PHOTOVOLTAIC EFFECTS; RAMAN SCATTERING; RAPID THERMAL ANNEALING; SELF ASSEMBLY; SEMICONDUCTOR DIODES;

ANNEALING TEMPERATURE; INTERMIXING; PHOTOVOLTAIC APPLICATIONS; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 39749128698     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.11.019     Document Type: Article

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