Dynamic low-frequency noise cancellation in quantum well Hall sensors (QWHS)

Sensors and Actuators, A: Physical

Volumn 142, Issue 2, 2008, Pages 528-532

  Kerlain, Alexandre ^a   Mosser, Vincent ^a  

^a Itron France   (France)

Author keywords

Compound semiconductors; GaAs; Gate noise; Hall sensor; Integrated Hall microsystem; Low frequency noise; QWHS; Spinning current

Indexed keywords

FIELD EFFECT TRANSISTORS; HALL EFFECT; NOISE ABATEMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; THERMAL NOISE;

COMPOUND SEMICONDUCTORS; GATE NOISE; INTEGRATED HALL MICROSYSTEM; QUANTUM WELL HALL SENSORS (QWHS);

MAGNETIC SENSORS;

EID: 39749100862     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2007.10.002     Document Type: Article

References (13)

1. Mosser V., Contreras S., Aboulhouda S., Lorenzini P., Kobbi F., Robert J.L., and Zekentes K. High sensitivity Hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures. Sens. Actuators A43 (1994) 135
2. Haned N., and Missous M. Nano-tesla magnetic field magnetometry using an InGaAs-AlGaAs-GaAs 2DEG Hall sensor. Sens. Actuators A 102 (2003) 216
3. 0.9As/GaAs micro-Hall devices. IEEE Sens. J. 5 (2005) 883
4. Novoselov K.S., Morozov S.V., Dubonos S.V., Missous M., Volkov A.O., Christian D.A., and Geim A.K. Submicron probes for Hall magnetometry over the extended temperature range from helium to room temperature. J. Appl. Phys. 93 12 (2003) 10053
5. Munter P.J.A. A low-offset spinning-current. Hall plate. Sens. Actuators A21-23 (1990) 743
6. Bakker A., and Huijsing J.H. A CMOS spinning-current Hall-sensor with integrated Submicrovolt Offset Instrumentation Amplifier. Proc. of Eurosensors XIII (1999) 1045
7. Popovic R.S. Hall Effect Devices. second ed. (2004), IOP Publishing, Bristol Philadelphia
8. 2 single crystals. Phys. Rev. B 70 (2004) 180504R
9. 8 single-molecule magnets detected via magnetization measurements. Phys. Rev. B 72 (2005) 052401
10. Pross A., Crisan A.I., Bending S.J., Mosser V., and Konczykowski M. Second-generation quantum-well sensors for room temperature scanning Hall probe microscopy. J. Appl. Phys. 97 (2005) 096105
11. Mosser V., Jung G., Przybytek J., Ocio M., and Haddab Y. Proc. SPIE Vol. 5115 Low-frequency noise in AlGaAs/InGaAs/GaAs Hall micromagnetometers Noise and Information in Nanoelectronics. Sens. Stand. (2003) 183-195
12. Danneville F., Dambrine G., Happy H., Tadyszak P., and Cappy A. Influence of the gate leakage current on the noise performance of MESFETs and MODFETs. Solid State Electron. 38 (1995) 1081-1087
13. Leroy P., Coillot C., Mosser V., Roux A., and Chanteur G. Use of magnetic concentrators to highly improve the sensitivity of Hall effect sensors. Sensor Lett. 5 (2007) 162