A4b/cell NROM 1Gb data-storage memory

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2006, Pages

  Polansky, Yan ^a   Lavan, Avi ^a   Sahar, Ran ^a   Dadashev, Oleg ^a   Betser, Yoram ^a   Cohen, Guy ^a   Maayan, Eduardo ^a   Eitan, Boaz ^a   Ni, Ful Long ^b   Ku, Yen Hui Joseph ^b   Lu, Chih Yuan ^b   Chen, Tim Chang Ting ^b   Liao, Chun Yu ^b   Chang, Chin Hung ^b   Chen, Chung Kuang ^b   Ho, Wen Chiao ^b   Shin, Yite ^b   Ting, Wenchi ^b   Lu, Wenpin ^b  

^a Saifun Semiconductors   (Israel)

^b Macronix ^*  (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; FLASH MEMORY; NETWORKS (CIRCUITS); THRESHOLD VOLTAGE; VOLTAGE CONTROL;

DATA-STORAGE MEMORY; DRAIN-SIDE SENSING CIRCUIT; TWO-PHASE PROGRAMMING ALGORITHM;

DATA STORAGE EQUIPMENT;

EID: 39749087168     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. B. Eitan, et al., EDL-21 (11), pp. 543-545, 2000.
2. E. Maayan, et al., "A 512Mb NROM Data Storage Memory with 8MB/s Data Rate," ISSCC Dig. Tech. Papers, pp. 100-101, Feb., 2002.
3. Y. Sofer, et al., "A 55mm' 256Mb NROM Flash Memory with Embedded Microcontroller Using an NROM-Based Program File ROM," ISSCC Dig. Tech. Papers, pp. 48-49, Feb., 2004.