Embossed structure embedded organic memory device

Thin Solid Films

Volumn 516, Issue 10, 2008, Pages 3133-3137

  Joo, Won Jae ^a   Choi, Tae Lim ^b   Lee, Kwang Hee ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Cheil Industries Inc   (South Korea)

Author keywords

Embossed structure; Metal filament formation; Nonvolatile memory; Organic memory; Switching delay time

Indexed keywords

SWITCHING; THERMODYNAMIC STABILITY;

METAL FILAMENT FORMATION; NONVOLATILE MEMORY; SWITCHING DELAY TIME;

DATA STORAGE EQUIPMENT;

EID: 39649101942     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.08.116     Document Type: Article

References (19)

1. Muller G., Happ T., Kund M., Lee G.Y., Nagel N., and Sezi R. Electron Devices Meeting, IEDM Technical Digest. IEEE International (13-15 Dec. 2004) 567
2. Moller S., Perlov C., Jackson W., Taussig C., and Forrest S.R. Nature 426 (2003) 166
3. Ouyang J., Chu C., Szmanda C.R., Ma L., and Yang Y. Nat. Mater. 3 (2004) 918
4. Scott J.C. Science 304 (2004) 62
5. McElvan J., Antoniads H., Hueschen M.R., Miller J.N., Roitman D.M., Sheats J.R., and Moon R.L. J. Appl. Phys. 80 (1996) 6002
6. Oyamada T., Tanaka H., Matsushige K., Sasabe H., and Adachi C. Appl. Phys. Lett. 83 (2003) 1252
7. Ling Q., Song Y., Ding S.J., Zhu C., Chan D.S.H., Kwong D.-L., Kang E.-T., and Neoh K.-G. Adv. Mater. 17 (2005) 455
8. Bozano L.D., Kean B.W., Deline V.R., Salem J.R., and Scott J.C. Appl. Phys. Lett 84 (2004) 607
9. Bandhopadhyay A., and Pal A.J. J. Phys. Chem., B 107 (2003) 2531
10. Joo W.-J., Choi T.-L., Lee S.K., Chung Y., Jung M.-S., and Kim J.M. Org. Electron. 7 (2006) 600
11. Ma L., Xu Q., and Yang Y. Appl. Phys. Lett. 84 (2004) 4908
12. Simmons J.G., and Verderber R.R. Proc. R. Soc. Lond., Ser. A 301 (1967) 77
13. Joo W.-J., Choi T.-L., Lee J., Lee S.K., Jung M.-S., Kim N., and Kim J.M. J. Phys. Chem., B 110 (2006) 23812
14. Joo W.-J., Choi T.-L., Lee K.-H., and Chung Y. J. Phys. Chem., B 111 (2007) 7756
15. Segui Y., Ai B., and Carchano H. J. Appl. Phys. 47 (1976) 140
16. Kevorkian J., Labes M.M., Larson D.C., and Wu D.C. Trans. Faraday Soc. 51 (1971) 139
17. Pender L.F., and Fleming R.J. J. Appl. Phys. 46 (1975) 3426
18. Ballard W.P., and Christy R.W. J. Non-Cryst. Solids 17 (1975) 81
19. Kasap S.O. Principles of Electronic Materials and Devices. 2nd ed. (2002), McGraw-Hill Co., New York 115 Chapt. 2