Multi-gate MOSFET design

ESSCIRC 2006 - Proceedings of the 32nd European Solid-State Circuits Conference

Volumn , Issue , 2006, Pages 66-69

  Knoblinger, G ^a   Pacha, C ^b   Kuttner, F ^a   Marshall, A ^c   Russ, C ^b   Haibach, P ^b   Patruno, P ^d   Schulz, T ^b   Arnim, K V ^b   Engelstaedter, J P ^a   Bertolissi, L ^a   Xiong, W ^c,e   Cleavelin, C R ^c   Schruefer, K ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c TEXAS INSTRUMENTS   (United States)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e Advanced Technology Development Facility (ATDF) Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING BLOCKS; CIRCUIT DESIGN; ELECTRODE MATERIALS;

ANALOG CIRCUITS; INTEGRATED CIRCUIT LAYOUT; LOGIC GATES;

MOSFET DEVICES;

EID: 39549115349     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIR.2006.307532     Document Type: Conference Paper

References (8)