The ESBT® (Emitter-Switched Bipolar Transistor): A new monolithic power actuator technology devoted to high voltage and high frequency applications

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 418-421

  Enea, V ^a   Kroell, D ^a   Messina, M ^a   Ronsisvalle, C ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATORS; ELECTRIC POTENTIAL; ENERGY DISSIPATION; MOSFET DEVICES; NATURAL FREQUENCIES; SWITCHING;

CASCODE CONFIGURATIONS; EMITTER-SWITCHED BIPOLAR TRANSISTOR; HIGH FREQUENCY APPLICATIONS; MONOLITHIC POWER ACTUATORS;

BIPOLAR TRANSISTORS;

EID: 39549085964     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430967     Document Type: Conference Paper

References (5)

1. Clemente, S.; Pelly, B.; Ruttonsha, R.; Taylor, B.: "High voltage, high frequency switching using a cascode connection of Hexfet and bipolar transistor". IEEE Industry Application Society Conference 1982.
2. Baliga B. J.: "Power semiconductor devices"
3. Buonomo, S.; Enea, V.; Musumeci, S.; Pagano, R.; Raciti, A.; Ronsisvalle, C.: "A new monolithic power actuator devoted to high voltage and high frequency applications". ISPSD'04 - Kitakyushu (Japan), May 2004.
4. Schulz, W.: "Dynamic saturation voltage - a designer's comparison". POWERCONVERSION INT. Oct 1983.
5. Buonomo, S.; Musumeci, S.; Pagano, R.; Raciti, A.; Scollo, R.; Vitale, G.: "A new driving circuitfor cascode devicesperforming optimal control of the storage time". IAS 2005.