Junction characteristics of electron-irradiated Ga0.5In0.5P n+-p diodes and solar cells

Journal of Applied Physics

Volumn 81, Issue 8, 1997, Pages 3700-3706

  Reinhardt, K C ^a,b   Yeo, Y K ^a   Ostdiek, P H ^a   Hengehold, R L ^a  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3943108896     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365491     Document Type: Article

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