Electroluminescence from deuterium terminated porous silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 8 SUPPL. B, 1997, Pages

  Matsumoto, Takahiro ^a   Masumoto, Yasuaki ^a   Nakagawa, Takashi ^b   Hashimoto, Masahiro ^b   Ueno, Koki ^b   Koshida, Nobuyoshi ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Deuterium termination; Diode; Electroluminescence; Porous silicon

Indexed keywords

DEUTERIUM; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; MATHEMATICAL MODELS; OPTICAL PROPERTIES; OXIDATION; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; SEMICONDUCTOR DIODES;

PHOTOINDUCED OXIDATION;

POROUS SILICON;

EID: 3943098650     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1089     Document Type: Article

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