Multiwafer molecular beam epitaxy for high volume production of GaAs/AIGaAs heterojunction bipolar transistor wafers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1475-1478

  Block, T R ^a   Wojtowicz, M ^a   Han, A C ^a   Olson, S R ^a   Oki, A K ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3943083192     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. J. Neal, Microwave J. 38, 120 (1995).
2. J. Neal, Microwaves RF 33, 205 (1994).
3. D. C. Streit, A. K. Oki, T. R. Block, M. D. Lammert, M. W. Hoppe. D. K. Umemoto, and M. Wojtowicz, J. Vac. Sci. Technol. B 14, 2216 (1996).
4. X. Yin, F. H. Pollak, L. Pawlowicz, T. O'Neill, and M. Hafizi, Appl. Phys. Lett. 56, 1278 (1990).