Diamond icosahedron on a TiN-coated steel substrate

Microelectronics Journal

Volumn 35, Issue 9, 2004, Pages 709-712

  Breza, J ^a   Kadlecikova M ^a   Vojs, M ^a   Michalka, M ^b   Vesely M ^a   Danis T ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INTERNATIONAL LASER CENTER   (Slovakia)

Author keywords

Diamond; EDX; Icosahedron; MW CVD; Raman spectroscopy; SEM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COATINGS; ENERGY DISPERSIVE SPECTROSCOPY; HYDROGEN; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; STEEL; TITANIUM NITRIDE;

ICOSAHEDRON; MULTIFOLD TWINNING; MW CHEMICAL VAPOR DEPOSITION (CVD); STEEL SUBSTRATES;

DIAMONDS;

EID: 3943079246     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.06.020     Document Type: Article

References (4)

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3. J. Bühler, Y. Prior, Study of morphological behaviour of single diamond crystals, J. Crystal Growth 209 (2000) 779-788.
4. C.-S. Yan, Y.K. Vohra, Multiple twinning and nitrogen defect center in chemical vapour deposited homoepitaxial diamond, Diamond Relat. Mater. 8 (1999) 2022-2031.