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Physical Review Letters

Volumn 68, Issue 18, 1992, Pages 2798-2801

Measuring properties of point defects by electron microscopy: The Ga vacancy in GaAs

(6) Rouviere, J L a Kim, Y a Cunningham, J a Rentschler, J A a Bourret, A a Ourmazd, A a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3943071713 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.68.2798 Document Type: Article

Times cited : (57)

References (22)

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7
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- Annealing in an As-rich ambient injects VGa and As interstitials. It has been shown [5] that each defect type causes intermixing on its own sublattice. By monitoring Ga/Al intermixing, we measure the properties of the VGa only.

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- Our arguments apply to vacancies and to interstitials diffusing by the ``kick out'' mechanism [1].

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17
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- The presence of the undoped-buffer-layer/substrate produces a small correction, easily incorporated by a solution consisting of a sum of error functions. This modified expression was used to obtain the fits shown.

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- The formation entropy Sf is deduced as follows: c0 = ( PAs/ 135.1 T5/2)1/4( nd/ ni)3 [1]. Thus, Sf= k ln [ ( 135.1 times T5/2)1/4D0/ d0].

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.