The growth and characterization of GaInSe2 single crystals

Journal of Physics D: Applied Physics

Volumn 30, Issue 18, 1997, Pages 2509-2513

  Mobarak, M ^a   Berger, H ^b   Lorusso, G F ^c   Capozzi, V ^d   Perna, G ^d   Ibrahim, M M ^a   Margaritondo, G ^b  

^a SOUTH VALLEY UNIVERSITY   (Egypt)

^b EPFL   (Switzerland)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL GROWTH FROM MELT; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EXCITATION INTENSITY; GALLIUM INDIUM SELENIDE; MICROPROBE ANALYSIS; PHOTOLUMINESCENCE MEASUREMENTS; SELECTED AREA ELECTRON DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3943060769     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/18/003     Document Type: Article

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