High mobility poly si thin film transistors using solid phase crystallized a si films deposited by plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 29, Issue 12, 1990, Pages 2380-2383

  Akenaka, S T ^a   Kunii, Masafumi ^a   Oka, Hideaki ^a   Kurihara, Hajime ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

Amorphous; Polycrystalline silicon crystallinity; Tft mobility pevcdsolid phase crystallization

Indexed keywords

EID: 3943056842     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.29.L2380     Document Type: Article

References (3)

1. M. Kunii, K. Hasegawa, H. Oka, Y. Nakazawa, T. Takeshita, and H. Kurihara, IEEE Trans. Electron Devices 36 (1989) 2877.
2. T. Aoyama, G. Kawachi, N. Konishi, T. Suzuki, Y. Okajima, and K. Miyata, J. Electrochem. Soc. 136 (1989) 1169.
3. K. T.Y. Kung, and R. Reif, J. Appl. Phys. 62 (1987) 1503.