A diagonal cut through the SiC bulk unit cell: Structure and composition of the 4H-SiC (1 1- 02) surface

Applied Physics Letters

Volumn 92, Issue 6, 2008, Pages

  Virojanadara, C ^a   Hetzel, M ^a   Starke, U ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRONIC STRUCTURE; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON;

ANISOTROPIC ELECTRONIC SURFACE STATE; SIC BULK UNIT CELL;

SILICON CARBIDE;

EID: 39349094368     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2839384     Document Type: Article

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