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Volumn 103, Issue 3, 2008, Pages

Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect- transistor techniques

(8) Chandrasekhar Rao, T V a,d Antoszewski, J a Faraone, L a Cristoloveanu, S b Nguyen, T b Gentil, P b Bresson, N c Allibert, F c

a UNIVERSITY OF WESTERN AUSTRALIA (Australia)

b IMEP LAHC (France)

c PARC TECHNOLOGIQUE DES FONTAINES (France)

d BHABHA ATOMIC RESEARCH CENTRE (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HALL EFFECT; MAGNETISM; SILICON; SPECTRUM ANALYSIS; TRANSISTORS;

MOBILITY SPECTRUM ANALYSIS; SILICON-ON-INSULATOR LAYERS;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 39349091830 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2837841 Document Type: Article

Times cited : (5)

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