Modeling the sensitivity of CMOS circuits to radiation induced single event transients

Microelectronics Reliability

Volumn 48, Issue 1, 2008, Pages 29-36

  Wirth, Gilson I ^a,b   Vieira, Michele G ^a   Neto, Egas H ^a   Kastensmidt, Fernanda Lima ^b  

^a UNIVERSIDADE ESTADUAL DO RIO GRANDE DO SUL   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

FORMAL LOGIC; GATES (TRANSISTOR); MATHEMATICAL MODELS; STORAGE ALLOCATION (COMPUTER);

CIRCUIT SENSITIVITY; SINGLE EVENT TRANSIENTS (SET);

CMOS INTEGRATED CIRCUITS;

EID: 39349091643     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.085     Document Type: Article

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