Properties of pulse plated ZnS films

Materials Letters

Volumn 62, Issue 12-13, 2008, Pages 1823-1826

  Murali, K R ^a   Vasantha, S ^b   Rajamma, K ^c  

^a CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

^b Coimbatore Institute of Technology   (India)

^c AVINASHILINGAM INSTITUTE FOR HOME SCIENCE AND HIGHER EDUCATION FOR WOMEN   (India)

Author keywords

Electronic materials; II VI; Semiconductors; Thin films

Indexed keywords

CURRENT DENSITY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR MATERIALS; THERMAL CONDUCTIVITY; X RAY DIFFRACTION; ZINC SULFIDE;

ELECTRONIC MATERIALS; PHOTOLUMINESCENCE EMISSION PEAK; PULSE PLATING TECHNIQUES; ROOM TEMPERATURE;

THIN FILMS;

EID: 39049152055     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2007.10.012     Document Type: Article

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