The development of room temperature LEDs and lasers for the mid-infrared spectral range

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 1, 2008, Pages 129-143

  Krier, A ^a   Yin, M ^a   Smirnov, V ^b   Batty, P ^a   Carrington, P J ^a   Solovev, V ^b   Sherstnev, V ^b  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

MID-INFRARED LIGHT SOURCES; NARROW GAP MATERIALS; ROOM TEMPERATURE;

ENERGY GAP; INFRARED SPECTROSCOPY; OPTICAL MATERIALS; SEMICONDUCTOR LASERS; THERMAL EFFECTS;

LIGHT EMITTING DIODES;

EID: 38849171831     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200776833     Document Type: Conference Paper

References (60)

1. A. Krier, Mid-Infrared Semiconductor Optoelectronics (Springer, London, 2006), ISBN 1-84628-208-X.
2. H. H. Gao, A. Krier, and V. Sherstnev, J. Phys. D, Appl. Phys. 32, 1768-1772(1999).
3. A. Krier and V. V. Sherstnev, J. Phys. D, Appl. Phys. 33, 101-106(2000).
4. A. Krier, V. V. Sherstnev, and H. H. Gao, J. Phys. D 33, 1656-1661(2000).
5. A. Krier, V. V. Sherstnev, and Yu. Yakovlev, J. Appl. Phys. 33, 101 (2000).
6. A. Krier, H. H. Gao, and V. V. Sherstnev, IEE Proc. J, Optoelectron. 147, 217 (2000).
7. A. N. Baranov, T. I. Voronina, A. A. Gorelenok, T. S. Logunova, A. M. Litvak, M. A. Sipovskaya, S. P. Starosel'tseva, V. A. Tikhomirova, V. V. Sherstnev, Yu. P. Yakovlev, Semiconductors 26, 905 (1992).
8. M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, and V. V. Shustov, Semiconductors 36, 1001 (2002).
9. V. A. Mishournyi, F. de Anda, A. Y. Gorbachev, and V. I. Vasil'ev, J. Electron. Mater. 28, 959 (1999).
10. V. I. Vasil'ev, M. V. Baidakova, E. A. Kognovitskaya, V. I. Kuchinskii, I. P. Nikitina, and V. M. Smirnov, 3rd International Conference on Mid-infrared Optoelectronics Materials & Devices, RWTH, Aachen, 1999, p. 85.
11. V. I. Vasil'ev, I. P. Nikitina, D. Akhmedov, V. M. Smirnov, and D. A. Vasukov, Proceedings of the 27th International Symposium on Compound Semiconductors (IEEE, Piscataway,2001),p. 233.
12. V. I. Vasil'ev, I. P. Nikitina, V. M. Smirnov, and D. N. Tretyakov, Mater. Sci. Eng. B 66, 67 (1999).
13. M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, and E. A. Kognovitskaya, Semiconductors 36, 944 (2002).
14. M. Aidaraliev, G. G. Zegrya, N. V. Zotova, S. A. Karandashev, B. A. Matveev, N. M. Stus', and G. N. Talalakin, Semiconductors 26, 138 (1992).
15. M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, Appl. Phys. Lett. 87, 241104 (2005).
16. V. I. Vasil'ev, V. V. Kuznetzov, V. A. Mishournyi, V. V. Sazonov, and N. N. Faleev, Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Vol. 2 (Trans Tech, Lausanne, 1991), p. 659.
17. A. G. Deryagin, N. N. Faleev, V. M. Smirnov, G. S. Sokolovsku, and V. I. Vasil'ev, IEE Proc. J, Optoelectron. 144, 438 (1997).
18. P. Varshni, Physica 34, 149 (1967).
19. I. T. Yamamoto, K. Sakai, and S. Akiba, IEEE J. Quantum Electron. 15, 684(1979).
20. D. O. Toginho Filho, I. F. L. Dias, E. Laureto, J. L. Duarte, S. A. Laurenco, L. C. Pocas, S. S. Prabhu, and J. Klem, J. Appl. Phys. 97, 123702 (2005).
21. T. Yamamoto, M. Kasu, S. Noda, and A. Sasaki, J. Appl. Phys. 68, 5318(1990).
22. T. H. Chiu, W. T. Tsang, S. N. G. Chu, J. Shah, and J. A. Ditzenberger, Appl. Phys. Lett. 46(4) 408-411 (1985).
23. K. Shim and H. Rabitz, J. Appl. Phys. 85(11), 7705 (1999).
24. Y. Mao and A. Krier, Opt. Mater. 6, 55-61 (1996).
25. A. Krier and Z. Labadi, Appl. Phys. A 71(3), 249-253 (2000).
26. A. Krier, X. L. Huang, and A. Hammiche, Appl. Phys. Lett. 77(23), 3791-3793 (2000).
27. A. Krier and Y. Mao, IEE Proc., Optoelectron. 144, 355-359 (1997).
28. H. R. Dizaji and R. Dhanasekaran, II Nuovo Cimento. D 17, 601-607(1995).
29. M. R. Wilson, A. Krier, and Y. Mao, J. Electron. Mater. 25, 1439-1445(1996).
30. A. Krier, X. L. Huang, and A. Hammiche, J. Phys. D 34, 1-5(2001).
31. B. R. Bennett, R. Magno, and B. V. Shanabrook, Appl. Phys. Lett. 68, 505 (1996).
32. M. Yano, Y. Seki, H. Ohkawa, K. Koike, S. Sasa, and M. Inoue, Jpn. J. Appl. Phys. 37, 2455 (1998).
33. J. A. Floro, E. Chason, M. B. Sinclair, L. B. Freund, and G. A. Lucadamo, Appl. Phys. Lett. 73, 951 (1998).
34. C. S. Peng, Q. Huang, W. Q. Cheng, J. M. Zhou, Y. H. Zhang, T. T. Sheng, and C. H. Tung, Appl. Phys. Lett. 72, 2541 (1998).
35. F. M. Ross, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 80, 984(1998).
36. G. B. Stringfellow and P. E. Greene, J. Phys. Chem. Solids 30, 1779 (1969).
37. A. Krier and X. L. Huang, Physica E 15, 159-163 (2002).
38. A. Krier, X. L. Huang, and A. Hammiche, Appl. Phys. Lett. 77(23), 3791-3793 (2000).
39. A. Joullié and P. Christol, C. R. Phys. 4, 621-637 (2003).
40. A. A. Allerman et al., Electron. Lett. 34, 369 (1998).
41. F. Capasso et al., Electron. Lett. 30, 865 (1994).
42. C. Sirtori, H. Page, and C. Becker, Philos. Trans. R. Soc. A 359, 505 (2001).
43. J. Faist et al., Science 264, 553 (1994).
44. R. Teissier et al, Appl. Phys. Lett. 85, 167 (2004).
45. M. P. Semtsiv, Appl. Phys. Lett. 85, 1478 (2004).
46. A. Evans et al., Appl. Phys. Lett. 85, 2166 (2004).
47. M. Aidaraliev et al, Semicond. Sci. Technol. 8, 157 (1993); Semicond. Sci. Technol. 10, 151 (1995).
48. M. Aydaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, M. A. Remennyi, N. M. Stus, G. N. Talalakin, W. W. Bewley, J. R. Lindle, and J. R. Meyer, Appl. Phys. Lett. 81, 1166(2002).
49. V. V. Sherstnev, A. M. Monahov, A. Krier, and G. Hill, Appl. Phys. Lett. 77(24), 3908-3910 (2000).
50. D. A. Wright, V. V. Sherstnev, A. Krier, A. Monakhov, and G. Hill, IEE Proc. J, Optoelectron. 150(4) 314-317 (2003).
51. V. V. Sherstnev, A. Monakhov, A. Krier, and D. A. Wright, IEE Proc. J, Optoelectron. 152(1), 1 -5 (2005).
52. V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova, Yu. P. Yakovlev, N. S. Averkiev, A. Krier, and G. Hill, Semiconductors 39, 1122 (2005).
53. G. Norris, A. Krier, V. V. Sherstnev, A. Monakhov, and A. Baranov Appl. Phys. Lett. 90, 011105 (2007).
54. Ya. V. Terent'ev et al., in: Proc. Int. Conf. on Physics of Semiconductors, Osaka, Vol II (Springer, 2000), p. 401
55. S. V. Ivanov, A. N. Semenov, V. A. Solov'ev, O. G. Lyublinskaya, Ya. V. Terent'ev, B. Ya. Meltser, L. A. Prokopova, A. A. Sitnikova, A. A. Usikova, A. A. Toropov, and P. S. Kop'ev, J. Cryst. Growth 278, 72-77 (2005).
56. V. A. Solov'ev, O. G. Lyublinskaya, A. N. Semenov, B. Ya. Meltser, D. D. Solnyshkov, Ya. V. Terent'ev, L. A. Prokopova, A. A. Toropov, S. V. Ivanov, and P. S. Kop'ev, Appl. Phys. Lett. 86, 011109 (2005).
57. C. Renard, X. Marcadet, J. Massies et al., J. Cryst. Growth 259, 69 (2003).
58. A. N. Semenov, V. A. Solov'ev, B. Ya. Meltser, O. G. Lyublinskaya, Ya. V. Terent'ev, A. A. Toropov, A. A. Sitnikova, and S. V. Ivanov, in: Proc. 13th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, 2005, p. 334.
59. V. A. Solov'ev, I. V. Sedova, O. G. Lyublinskaya, A. N. Semenov, B. Ya. Meltser, S. V. Sorokin, Ya. V. Terent'ev, and S. V. Ivanov, Tech. Phys. Lett. 31, 235-237 (2005).
60. V. A. Solov'ev, Ya. V. Terent'ev, O. G. Lyublinskaya, B. Ya. Meltser, A. N. Semenov, I. V. Sedova, S. V. Sorokin, and S. V. Ivanov, 12th Int. Conf. on Narrow Gap Semiconductors, Toulouse, France, 2005, p. 87.