In situ monitoring of silicon plasma etching using a quantum cascade laser arrangement

Chemical Vapor Deposition

Volumn 13, Issue 6-7, 2007, Pages 351-360

  Stancu, Gabi Daniel ^a   Lang, Norbert ^a   Röpcke, Jürgen ^a   Reinicke, Marco ^b   Steinbach, Andreas ^c   Wege, Stephan ^c  

^a INP GREIFSWALD   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

Absorption cross section; Concentration; Deep trench etching; Infrared absorption; Interferometry; MERIE; NF3; Plasma etching; QCLAS; Quantum cascade laser; SiF4

Indexed keywords

ABSORPTION; CONCENTRATION (PROCESS); DATA STORAGE EQUIPMENT; ETCHING; GAS ABSORPTION; INTERFEROMETERS; INTERFEROMETRY; LASERS; PLASMA APPLICATIONS; PLASMA ETCHING; PLASMAS; QUANTUM CASCADE LASERS; RANDOM ACCESS STORAGE; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR LASERS; SILICON; SILICON COMPOUNDS; SILICON WAFERS;

ABSORPTION CROSS-SECTION; CONCENTRATION; DEEP TRENCH ETCHING; MERIE; NF3; QCLAS; QUANTUM CASCADE LASER; SIF4;

ABSORPTION SPECTROSCOPY;

EID: 38849125806     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200606584     Document Type: Article

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