Influence of differently formed interfacial aluminium oxide on the structural properties of poly-Si films prepared by aluminium induced crystallisation

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 2, 2007, Pages 359-362

  Dimova Malinovska, D ^a   Nichev, H ^a   Angelov, O ^a   Sendova Vassileva, M ^a   Sendova, M ^b   Mikli, V ^c  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b NEW COLLEGE OF FLORIDA   (United States)

^c TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

Author keywords

Aluminium induced crystallization; Evaporation; Interface oxide layer; Poly Si; Sputtering

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CRYSTALLITES; EVAPORATION; MAGNETRON SPUTTERING; METALLIC FILMS; OXIDE FILMS; POLYSILICON; SPUTTERING; STRUCTURAL PROPERTIES; THIN FILMS;

ALUMINIUM OXIDE; ALUMINIUM-INDUCED CRYSTALLIZATION; GRAIN FORMATION; INTERFACE OXIDE; INTERFACIAL OXIDES; POLY-SI THIN FILM; SUBSTRATE TEMPERATURE; UNHEATED SUBSTRATES;

FILM PREPARATION;

EID: 38749125560     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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