Surface optic phonons in cylindrical and rectangular cross-sectional semiconducting nanowires

Solid State Phenomena

Volumn 121-123, Issue PART 2, 2007, Pages 955-966

  Xiong, Qihua ^a   Gupta, R ^b   Wang, J ^a   Mahan, G D ^a   Lew Yan Voon, L C ^c   Eklund, P C ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

Author keywords

Dielectric continuum model; Raman scattering; Semiconducting nanowires; Surface optic phonons

Indexed keywords

NANOWIRES; RAMAN SCATTERING; SEMICONDUCTOR MATERIALS; SURFACE TREATMENT;

DIELECTRIC CONTINUUM MODELS; SEMICONDUCTING NANOWIRES;

PHONONS;

EID: 38749113988     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/3-908451-30-2.955     Document Type: Conference Paper

References (28)

1. Cui, Y. and C.M. Lieber, Functional nanoscale electronic devices assembled using silicon nanowire building blocks. Science, 2001, 291(5505): p. 851-853.
2. Duan, X.F., et al., Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature, 2001, 409(6816): p. 66-69.
3. Huang, Y., et al., Logic gates and computation from assembled nanowire building blocks. Science, 2001, 294(5545): p. 1313-1317.
4. Samuelson, L., Self-forming nanoscale devices. Materials Today, 2003, 6(10): p. 22-31.
5. Shan, Y.H., et al., From Si source gas directly to positioned, electrically contacted Si nanowires: The self-assembling "grow-in- place" approach. Nano Letters, 2004, 4(11): p. 2085-2089.
6. Piscanec, S., et al., Raman spectroscopy of silicon nanowires. Physical Review B, 2003, 68(24): p. 241312(R).
7. Gupta, R., et al., Laser-induced Fano resonance scattering in silicon nanowires. Nano Letters, 2003, 3(5): p. 627-631.
8. Adu, K.W., et al., Confined phonons in Si nanowires. Nano Letters, 2005, 5(3): p. 409-414.
9. Stroscio, M.A., M. Dutta, and ebrary Inc., Phonons in nanostructures. 2001, Cambridge ; New York: Cambridge University Press. xiv, 274.
10. Richter, H., Z.P. Wang, and L. Ley, The one phonon Raman spectrum in microcrystalline silicon. Solid State Communications, 1981, 39,: p. 625-629.
11. Campbell, I.H. and P.M. Fauchet, The Effects of Microcrystal Size and Shape on the One Phonon Raman-Spectra of Crystalline Semiconductors. Solid State Communications, 1986, 58(10): p. 739-741.
12. Li, B.B., D.P. Yu, and S.L. Zhang, Raman spectral study of silicon nanowires. Physical Review B, 1999, 59(3): p. 1645-1648.
13. Wang, R.P., et al., Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects. Physical Review B, 2000, 61(24): p. 16827-16832.
14. Adu, K.W., et al., Inhomogeneous Laser Heating and Phonon Confinement in Si Nanowire. submitted to Nano Letters, 2005.
15. Mahan, G.D., et al., Optical phonons in polar semiconductor nanowires. Physical Review B, 2003, 68(7): p. -.
16. Lin, H.M., et al., Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires. Nano Letters, 2003, 3(4): p. 537-541.
17. Gupta, R., et al., Surface optical phonons in gallium phosphide nanowires. Nano Letters, 2003, 3(12): p. 1745-1750.
18. Gupta, R., et al., Surface opticalphonions in gallium phosphide nanowires. Nano Letters, 2003, 3(12): p. 1745-1750.
19. Xiong, Q., et al., Raman scattering from surface phonons in rectangular cross-sectional w-ZnS nanowires. Nano Letters, 2004, 4(10): p. 1991-1996.
20. Morales, A.M. and C.M. Lieber, A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science, 1998, 279(5348): p. 208-211.
21. Xiong, Q., et al., Raman spectroscopy and structure of crystalline gallium phosphide nanowires. Journal of Nanoscience and Nanotechnology, 2003, 3(4): p. 335-339.
22. Xiong, Q., et al., Optical properties of rectangular cross-sectional ZnS nanowires. Nano Letters, 2004, 4(9): p. 1663-1668.
23. Sernelius, B.E., Surface modes in physics. 2001.
24. Stroscio, M.A., et al., Polarization Eigenvectors of Surface-Optical Phonon Modes in a Rectangular Quantum Wire. Physical Review B, 1990, 42(2): p. 1488-1491.
25. Yu, P.Y. and M. Cardona, Fundamentals of semiconductors : physics and materials properties. 2nd updated ed. 1999, Berlin ; New York: Springer, xvi, 620.
26. Dan'kov, I.A., I.B. Kobyakov, and S.Y. Davydov, Elastic, piezoelectric, and dielectric properties of zinc sulfide as a function of the wurtzite/sphalerite phase ratio. Soviet Physics Solid State, 1982, 24(12): p. 2058-2063.
27. Ebisuzaki, Y. and M. Nicol, Raman spectrum of hexagonal zinc sulfide at high pressure. J. Phys. Chem. Solids, 1971, 33: p. 763-766.
28. Givargizov, E.I., Periodic instability in whisker growth. Journal of Crystal Growth, 1973, 20: p. 217-226.