Study on the sublimation growth of GaN using different powder sources and investigation on the sublimation behaviour of GaN powder by means of thermogravimetry

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2264-2267

  Kallinger, B ^a   Meissner, E ^b   Seng, D ^a,c   Sun, G ^b   Hussy, S ^b   Friedrich, J ^b   Muller G ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c Semikron Elektronik GmbH AndCo KG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN POWDERS; GAS FLOWING; GAS PRESSURES; GROWTH INTERFACES; GROWTH PARAMETERS; HOT ZONES; NITRIDE SEMICONDUCTORS; NUMERICAL MODELLING; NUMERICAL SIMULATIONS; PRESSURE RANGES; REACTOR DESIGNS; RF HEATING; SPECIES TRANSPORT; SUBLIMATION BEHAVIOUR; SUBLIMATION GROWTH; THERMOGRAVIMETRY;

COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYSTALS; ECOLOGY; ELECTRIC CONDUCTIVITY; FLOW PATTERNS; FLOW SIMULATION; GALLIUM ALLOYS; GALLIUM NITRIDE; NITRIDES; POWDERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SOFTWARE PACKAGES; STRUCTURAL DESIGN; SUBLIMATION;

SEMICONDUCTOR GROWTH;

EID: 38749110176     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674840     Document Type: Conference Paper

References (5)

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3. H. Wu et al., phys. stat. sol. (c) 2(7), 2032 (2005).
4. M. Kurz, A. Pusztai, and G. Mueller, J. Cryst. Growth. 198/199, 101 (1999).
5. H. Wu et al., phys. stat. sol. (c) 2(7), 2074 (2005).