Bismuth telluride-based materials obtained by rapid quenching process

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 680-684

  Reznichenko, M F ^a   Kuchumov, B M ^a   Koretskaya, T P ^a   Alexeyev, A V ^a   Gromilov, S A ^a  

^a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

A. Alloys; A. Electronic materials; B. Crystal growth; C. X ray diffraction; D. Electrical properties

Indexed keywords

CRYSTAL GROWTH; ELECTRIC PROPERTIES; ELECTRONIC EQUIPMENT; HIGH TEMPERATURE EFFECTS; RAPID QUENCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BISMUTH COMPOUNDS; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

BISMUTH TELLURIDE; ELECTRONIC MATERIALS;

THICK FILMS;

EID: 38749103138     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.091     Document Type: Article

References (3)

1. Goldsmid H.J. Thermoelectric Refrigeration (1964), Plenum Press, New York
2. Koukharenko E., Frety N., Shepelevich V.G., and Tedenac J.C. Microstructural characterization of ultrarapid quenched bismuth and antimony tellurides alloys. Crystal Growth V 222 (2001) 773-778
3. Glazov V.M., and Yatmanov Y.V. Izv. Akad. Nauk SSSR Neorg. Mater 26 11 (1990) 2291