Raman study of ZnSe/SiOx multilayers

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 1, 2007, Pages 178-181

  Scepanovic M J ^a   Grujic Brojcin M ^a   Bineva, I ^b   Nesheva, D ^b   Aneva, Z ^b   Levi, Z ^b   Popovic Z V ^a  

^a UNIVERSITY OF BELGRADE   (Serbia)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

Numeric simulation; Phonon confinement; Raman spectroscopy; ZnSe multilayers

Indexed keywords

CADMIUM COMPOUNDS; ENERGY GAP; II-VI SEMICONDUCTORS; MULTILAYERS; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; THERMAL EVAPORATION; VACUUM EVAPORATION; ZINC SELENIDE;

HOMOGENEOUS BROADENING; NUMERIC SIMULATION; PHONON CONFINEMENT; PHONON CONFINEMENT EFFECT; PHONON CONFINEMENT MODEL; RAMAN SCATTERING MEASUREMENTS; RESONANT ENHANCEMENTS; SURFACE PHONON MODE;

SELENIUM COMPOUNDS;

EID: 38749095865     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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