Noise characterization of 130 nm and 90 nm CMOS technologies for analog front-end electronics

IEEE Nuclear Science Symposium Conference Record

Volumn 1, Issue , 2006, Pages 214-218

  Manghisoni, M ^b,c   Ratti, L ^a,c,d   Re, V ^b,c   Speziali, V ^a,c,d   Traversi, G ^b,c  

^a IEEE

^b UNIVERSITY OF BERGAMO   (Italy)

^c INFN SEZIONE DI PAVIA   (Italy)

^d UNIVERSITY OF PAVIA   (Italy)

Author keywords

CMOS; Deep submicron; Front end electronics; Noise

Indexed keywords

ANALOG TO DIGITAL CONVERSION; APPLICATION SPECIFIC INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; PHOTODETECTORS; SEMICONDUCTING SILICON; SIGNAL NOISE MEASUREMENT;

ANALOG FRONT-END ELECTRONICS; DEEP SUBMICRON; PIXEL DETECTORS; SILICON STRIPS;

CMOS INTEGRATED CIRCUITS;

EID: 38649137688     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2006.356142     Document Type: Conference Paper

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