Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure

Optics Express

Volumn 16, Issue 2, 2008, Pages 1165-1173

  Prasankumar, R P ^a   Attaluri, R S ^b   Averitt, R D ^a,d   Urayama, J ^c   WeisseBernstein, N ^b   Rotella, P ^b   Stintz, A D ^b   Krishna, S ^b   Taylor, A J ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THREE DIMENSIONAL;

CARRIER RELAXATION; PHOTON ENERGY; THERMAL EMISSION; ULTRAFAST CARRIER DYNAMICS;

SEMICONDUCTOR QUANTUM DOTS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; TEMPERATURE;

ARSENICALS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; QUANTUM DOTS; TEMPERATURE;

EID: 38549182387     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.001165     Document Type: Article

References (39)

1. P. Bhattacharya, S. Ghosh, and A. D. Stiff-Roberts, "Quantum dot opto-electronic devices," Annu. Rev. Mater. Res. 34, 1 (2004).
2. C. B. Murray, D. J. Norris, and M. G. Bawendi, "Synthesis and characterization of nearly monodisperse CdE (E=S, Se, Te) semiconductor nanocrystallites," J. Am. Chem. Soc. 115, 8706 (1993).
3. 0.85As dots-in-a-well detector," Appl. Phys. Lett. 81, 1369 (2002).
4. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, "The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures," IEEEJ. Quantum Elect. 36, 1272 (2000).
5. J. Shah, Ultrafast spectroscopy of semiconductors and semiconductor nanostructures (Springer, New York, 1999).
6. V. I. Klimov, "Spectral and dynamical properties of multiexcitons in semiconductor nanocrystals," Annu. Rev. Phys. Chem. 58, 635 (2007).
7. A. S. Lenihan, M. V. G. Dutt, D. G. Steel, P. Bhattacharya, and S. Ghosh, "Biexcitonic resonance in the nonlinear optical response of an InAs quantum dot ensemble," Phys. Rev. B 69, 045306 (2004).
8. J. Urayama, T. B. Norris, J. Singh, and P. Bhattacharya, "Observation of phonon bottleneck in quantum dot electronic relaxation," Phys. Rev. Lett. 86, 4930 (2001).
9. J. Urayama, T. B. Norris, H. Jiang, J. Singh, and P. Bhattacharya, "Differential transmission measurement of phonon bottleneck in self-assembled quantum dot intersubband relaxation," Physica B 316-317, 74 (2002).
10. S. Krishna, "Quantum dots-in-a-well infrared photodetectors," J. Phys. D: Appl. Phys. 38, 2142 (2005).
11. L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, "Optical characteristics of 1.24-um InAs quantum-dot laser diodes," IEEE Photon. Technol. Lett. 11, 991 (1999).
12. A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, "Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 um," Appl. Phys. Lett. 76, 3430 (2000).
13. F. Pulizzi, A. J. Kent, A. Patane, L. Eaves, and M. Henini, "Time-resolved photoluminescence of InAs quantum dots in a GaAs quantum well," Appl. Phys. Lett. 84, 3046 (2004).
14. X. Mu, Y. J. Ding, B. S. Ooi, and M. Hopkinson, "Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs/GaAs quantum wells based on time-resolved pump and probe differential photoluminescence," Appl. Phys. Lett. 89, 181924 (2006).
15. A. I. Tartakovskii, R. S. Kolodka, H. Y. Liu, M. A. Migliorato, M. Hopkinson, M. N. Makhonin, D. J. Mowbray, and M. S. Skolnick, "Exciton fine structure splitting in dot-in-a-well structures," Appl. Phys. Lett. 88, 131115 (2006).
16. G. Raino, G. Visimberga, A. Salhi, M. De Vittorio, A. Passaseo, R. Cingolani, and M. De Giorgi, "Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation," Appl. Phys. Lett. 90, 111907 (2007).
17. T. Piwonski, I. O'Driscoll, J. Houlihan, G. Huyet, R. J. Manning, and A. V. Uskov, "Carrier capture dynamics of InAs/GaAs quantum dots," Appl. Phys. Lett. 90, 122108 (2007).
18. I. O'Driscoll, T. Piwonski, C.-F. Schleussner, J. Houlihan, G. Huyet, and R. J. Manning, "Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers," Appl. Phys. Lett. 91, 071111 (2007).
19. S. Krishna, S. Raghavan, G. von Winckel, P. Rotella, A. Stintz, C. P. Morath, D. Le, and S. W. Kennerly, "Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K," Appl. Phys. Lett. 82, 2574 (2003).
20. T. S. Sosnowski, T. B. Norris, H. Jiang, J. Singh, K. Kamath, and P. Bhattacharya, "Rapid carrier relaxation in In0.4Ga0.6As/GaAs quantum dots characterized by differential transmission spectroscopy," Phys. Rev. B 57, R9423 (1998).
21. T. B. Norris, K. Kim, J. Urayama, Z. K. Wu, J. Singh, and P. Bhattacharya, "Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots," J. Phys. D: Appl. Phys. 38, 2077 (2005).
22. H. Jiang and J. Singh, "Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study," Phys. Rev. B 56, 4696 (1997).
23. A. L. Efros, V. A. Kharchenko, and M. Rosen, "Breaking the phonon bottleneck in nanometer quantum dots: role of Auger-like processes," Solid State Commun. 93, 281 (1995).
24. V. I. Klimov, "Optical nonlinearities and ultrafast carrier dynamics in semiconductor nanocrystals," J. Phys. Chem. B 104, 6112 (2000).
25. F. Quochi, M. Dinu, L. N. Pfeiffer, K. W. West, C. Kerbage, R. S. Windeler, and B. J. Eggleton, "Coulomb and carrier-activation dynamics of resonantly excited InAs/GaAs quantum dots in two-color pump-probe experiments," Phys. Rev. B 67, 235323 (2003).
26. V. I. Klimov and D. W. McBranch, "Auger-process-induced charge separation in semiconductor nanocrystals," Phys. Rev. B 55, 13173 (1997).
27. Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakawa, "Efficient carrier relaxation mechanism in InGaAs/GaAs self-assembled quantum dots based on the existence of continuum states," Phys. Rev. Lett. 82, 4114 (1999).
28. U. Bockelmann and T. Egeler, "Electron relaxation in quantum dots by means of Auger processes," Phys. Rev. B 46, 15574 (1992).
29. B. Ohnesorge, M. Albrecht, J. Oshinowo, A. Forchel, and Y. Arakawa, "Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots," Phys. Rev. B 54, 11532 (1996).
30. R. Ferreira and G. Bastard, "Unbound states in quantum heterostructures," Nanoscale Res. Lett. 1, 120 (2006).
31. A. V. Uskov, J. McInerney, F. Adler, H. Schweizer, and M. H. Pilkuhn, "Auger carrier capture kinetics in self-assembled quantum dot structures," Appl. Phys. Lett. 72, 58 (1998).
32. E. W. Bogaart, J. E. M. Haverkort, T. Mano, T. van Lippen, R. Notzel, and J. H. Wolter, "Role of the continuum background for carrier relaxation in InAs quantum dots," Phys. Rev. B 72, 195301 (2005).
33. A. Vasanelli, R. Ferreira, and G. Bastard, "Continuous absorption background and decoherence in quantum dots," Phys. Rev. Lett. 89, 216804 (2002).
34. R. Ferreira and G. Bastard, "Phonon-assisted capture and intradot Auger relaxation in quantum dots," Appl. Phys. Lett. 74, 2818 (1999).
35. H. Jiang and J. Singh, "Radiative and non-radiative inter-subband transition in self-assembled quantum dots," Physica E 2, 720 (1998).
36. J. Urayama, T. B. Norris, H. Jiang, J. Singh, and P. Bhattacharya, "Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots," Appl. Phys. Lett. 80, 2162 (2002).
37. J. Siegert, S. Marcinkevicius, and Q. X. Zhao, "Carrier dynamics in modulation-doped InAs/GaAs quantum dots," Phys. Rev. B 72, 085316 (2005).
38. Z.-K. Wu, H. Choi, X. Su, S. Chakrabarti, P. Bhattacharya, and T. B. Norris, "Ultrafast electronic dynamics in unipolar n-doped InGaAs-GaAs self-assembled quantum dots," IEEE J. Quantum Elect. 43, 486 (2007).
39. H. Lim, S. Tsao, W. Zhang, and M. Razeghi, "High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature," Appl. Phys. Lett. 90, 131112 (2007).