Dual metal-insulator and insulator-insulator switching in nanoscale and Al doped VO2

Journal of Physics D: Applied Physics

Volumn 41, Issue 1, 2008, Pages

  Gentle, A ^a   Smith, G B ^a  

^a UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DIMERS; GRAIN SIZE AND SHAPE; SEMICONDUCTOR DOPING; SUPERCONDUCTING TRANSITION TEMPERATURE; THIN FILMS; VANADIUM COMPOUNDS;

DOPING LEVEL; INSULATOR-INSULATOR SWITCHING; RESISTIVE SWITCHING; SEMICONDUCTOR RESISTIVITY;

NANOPARTICLES;

EID: 38549169649     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/1/015402     Document Type: Article

References (17)

1. 2 between 0.25 eV and 5 eV Phys. Rev. 172 788-98
2. 2 in the metal phase: a plasmonic system with falling dc resistivity as temperature rises Nanotechnology 18 025202
3. 2 film near the metal-insulator transition Phys. Rev. B 54 4621-8
4. 2 Phys. Rev. B 48 4359-63
5. 2 Phys. Rev. B 73 165116
6. MacChesney J B and Guggenheim H J 1969 Growth and electrical properties of vanadium dioxide containing selected impurity ions J. Phys. Chem. Solids 30 225-34
7. 2 nanoparticle arrays Phys. Rev. Lett. 93 177403
8. Qazilbash M M, Burch K S, Whisler D, Shrekenhamer D, Chae B G, Kim H T and Basov D N 2006 Correlated metallic state of vanadium dioxide Phys. Rev. B 74 205118
9. 2 Appl. Phys. Lett. 65 1507-9
10. 2 nanocrystals: ultrafast control of surface plasmon resonance Opt. Lett. 30 558-60
11. Snoke D 2006 Coherent questions Nature 443 403
12. Eisenstein J P and MacDonald A H 2004 Bose-Einstein condensation of excitons in bilayer electron systems Nature 432 691-4
13. 2 films for energy-efficient windows Proc. SPIE 692 8-18
14. 2 Phys. Rev. Lett. 94 026404
15. 2-based two- and three-terminal devices New J. Phys. 6 52
16. 2 thin films Appl. Phys. Lett. 87 051910
17. 2 using femtosecond near-edge x-ray absorption Phys. Rev. Lett. 95 067405