Investigation of thermal measurement variables in high power GaN-based LEDs

Solid State Phenomena

Volumn 124-126, Issue PART 1, 2007, Pages 483-486

  Yang, Lianqiao ^a   Hu, Jianzheng ^a   Shin, Moo Whan ^a  

^a Myong Ji University   (South Korea)

Author keywords

Interface thermal resistance; Pressure; Temperature; Transient thermal measurement

Indexed keywords

GALLIUM NITRIDE; HEAT RESISTANCE; INTERFACES (MATERIALS); PRESSURE EFFECTS; TEMPERATURE CONTROL;

EXTERNAL APPLIED PRESSURE; TRANSIENT THERMAL MEASUREMENT;

LIGHT EMITTING DIODES;

EID: 38549136951     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/3-908451-31-0.483     Document Type: Conference Paper

References (9)

1. Jianzheng Hu, Lianqiao Yang, Woongjoon Hwang, and Moowhan Shin: J. Crystal Growth Vol. 288, (2006), p. 157.
2. Gábor Farkas, Quint van Voorst Vader, András Poppe, György Bognár: Proc. of 9th THERMNIC Workshop, Sep 24-26 (2003), p. 213.
3. J. C. J. Paasschens, S.Harmsma, and R. Vander Toorn: IEEE BCTM 5.1, (2004), p. 96.
4. nd IEEE SEMI-THERM Smposium.
5. Lianqiao Yang, Jianzheng Hu, Lan Kim, and Moowhanshin: physica status solidi (c), accepted.
6. Moo Whan Shin: Proc. of International LED Seminar 2005, Koyang, Korea, May 26-27 (2005), p. 49.
7. F.P. Incropera and D.P.DeWitt: 4th edition, John Wiley and Sons Inc. 1996.
8. P. D. Maycock: Solid-State Electronics, V. 10 (1967), p. 161.
9. V.V.Khartionov and N.V.Yakutin: Tech.Phys.42 (2) (1997), p. 125.